CE2301，PMOS管，充电器上用

P-Channel Enhancement Mode Field Effect Transistor

VDS= -20V ID= -2.8A

RDS(ON) = 100 mΩ , VGS@ -4.5V

RDS(ON) = 150 mΩ, VGS@ -2.5V

Features

z high dense cell design for extremely low RDS(ON)

z Red and reliable.

z Lead free product is acquired

z SOT-23-3 Package

ABSOLUTE MAXIMUM RATLNGS(TA=25℃ unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage VDS -20 V

Gate- Source Voltage VGS ±8 V

ID -2.8 A

Drain Current –Continuous

a

@ TJ=125℃-Pulsed IDM -10 A

Maximum Power Dissipation

a PD 1.25 W

Operating Junction and Storage Temperature Range TJ

，TStg -55 to 150 ℃