MEMS压力传感器-压力传感器

裸片： MTPD-150A-10G(Uncompensated Pressure Sensor Die) The MTPD150 series piezo-resistive pressuresensor dies are manufactured on six inch siliconwafers in a class 100 clean room using a stateof the art 1.2 micron CMOS facility and are thenbulked micro-machined in a class 1000 cleanroom. The wafers are batch manufactured usinga electrochemical etch stop process to achieveexcellent repeatability Operating Pressure Range：0～150psiA Over Pressure：0～750psiA Zero Pressure Offset Voltage (before bonding)：±15mV Non-linearity：±0.5%FS Bridge Resistance：4500～5500Ω Sensitivity：0.1/0.2/0.3 (Min/Typ/Max) mV/V/psi Full Scale Span：100/150/200 (Min/Typ/Max) mV Temperature coefficient of offset, TCO： -70/-2.5/+65 (Min/Typ/Max) ?V/V /°C Temperature coefficient of sensitivity, TCS： 16/23/29 (Min/Typ/Max) %FS/100°C Temperature coefficient of resistance, TCR： -13/-25/-37 (Min/Typ/Max) %FS/100°C