MOS管~电源MOS管 HS80N03DA 80A30V

DescriptionFeaturesThe HS80N03DA is the N-Channel logic enhancement

mode power field effect transistors are produced using

high cell density, DMOS trench technology.This high

density process is especially tailored to minimize

on-state resistance.These devices are particularly

suited for low voltage application.●High density cell design for ultra low RDS(on)

●Excellent package for good heat dissipationMaximum RatingsFeaturesDrain-Source Voltage 30V

Gate-Source Voltage ±20V

Pulsed Drain Current 170A

VDS 30V

RDS(on)Max. 6.5mΩ

ID 80A