HS25N06DA场效应管25A60V低压MOS-252

DescriptionFeaturesThe HS25N06DA is the N-Channel logic enhancement

mode power field effect transistors are produced using

high cell density, DMOS trench technology.This high

density process is especially tailored to minimize

on-state resistance.These devices are particularly

suited for low voltage application such as cellular

phone, notebook computer power management and

other battery powered circuits,and low in-line power

loss that are needed in a very small outlinesurface

mount package.●High density cell design for ultra low RDS(on)

●Excellent package for good heat dissipationMaximum RatingsFeaturesDrain-Source Voltage 60V

Gate-Source Voltage ±20V

Pulsed Drain Current 25A

VDS 60V

RDS(on)Max. 35mΩ

ID 25A