HS7N65F 7N65场效应三极管 N沟道650V7A TO220F 全新

DescriptionFeaturesThe HS7N65FA is the N-Channel enhancement mode

silicon gate power MOSFET which are produced by

using planar stripe and DMOS technology.The

MOSFET is designed for high voltage, high speed

power switching applications such as switching

regulators, switching converters, solenoid, motor

drivers, relay drivers.● Low gate charge ( typical 29nC)

● Fast switching capability

● Avalanche energy specified

● Improved dv/dt capabilityMaximum RatingsFeaturesDrain-Source Voltage 650V

Gate-Source Voltage ±30V

Pulsed Drain Current 31A

Single Pulsed AvalancheEnergy（note 2 250mJ

Avalanche Current（note1） 7A

Repetitive AvalancheCurrent （note 1） 15mJVDS 650V

RDS(on)Max. 1.25Ω

ID 7A