深圳市兴茂微电子有限公司
主营产品:
2023年09月11日 08:18
型号 |
HS25N06DA |
类型 |
MOS |
功率因数 |
- |
寿命 |
100000H |
输出电流 |
25A |
输出电压 |
60V |
输入电压 |
60V |
效率 |
- |
质保 |
3年 |
安装位置 |
外置 |
电磁兼容 |
无 |
保护 |
过载保护 |
外形尺寸(L*W*H) |
TO-252 |
DescriptionFeaturesThe HS25N06DA is the N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density, DMOS trench technology.This high
density process is especially tailored to minimize
on-state resistance.These devices are particularly
suited for low voltage application such as cellular
phone, notebook computer power management and
other battery powered circuits,and low in-line power
loss that are needed in a very small outlinesurface
mount package.●High density cell design for ultra low RDS(on)
●Excellent package for good heat dissipationMaximum RatingsFeaturesDrain-Source Voltage 60V
Gate-Source Voltage ±20V
Pulsed Drain Current 25A
VDS 60V
RDS(on)Max. 35mΩ
ID 25A
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