多晶125 硅片 多晶硅片 太阳能电池片硅片

5"多晶硅片

产品特点:

多晶硅片

P-型

硼掺杂

正方形

125 x 125 mm

厚度: 200 ± 20 μm

Multi-crystalline Wafer

Techniques for the production of

multi-crystalline silicon are simpler, and therefore cheaper than those

required for producing mono-crystalline material. However, the quality of

multi-crystalline material is lower than that of mono-crystalline material due

to the presence of grain boundaries.

Grain boundaries introduce high,

localized regions of recombination due to the introduction of extra defect

energy levels into the band gap. Thus, reducing the overall minority carrier

lifetime of the material while additionally reducing solar cell performance by

blocking carrier flows and providing shunting paths for current flows across

the p-n junction.

In order to avoid significant

recombination losses at grain boundaries, grain sizes of at least a few

millimeters are required to allow single grains to extend the full length of

the cell. This provides less resistance to carrier flows and generally

decreases the length of grain boundaries per cell unit.

Such multi-crystalline silicon wafers

predominantly stem from ingots crystallized in cubic molds. The general method

for producing multi-crystalline wafers (ingots) uses a square melting pot known

as a Bridgeman Furnace.Wafer Works Specs (Multi wafer)Category125*125mm (multi wafer)TypePDopantBoronCarbon content (atom/cm3)< 4*1017Oxygen content (atom/cm3)&lt; 8*1017Resistivity (ohm-cm)0.5~3Minorirty Carrier Lifetime (&mu;s)>=2Dimension (mm)125+/-0.5Thickness (&mu;m)200+/-20TTV (&mu;m)&lt;=40Bow/Warp (&mu;m)&lt;70 / &lt;100Surface Saw Damage Depth (um)&lt;=15Edge (Chip)Depth≦0.5mm，Length≦3.0mm, Defect≦2