三极管C2611

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-126 Plastic-Encapsulate Transistors C 2611 TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 1 W（ Tamb=25℃） Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 600 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS （ Tamb=25 ℃ unless otherwise specified） Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μ A ， IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO IC= 1 mA , IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 100 μ A， IC=0 7 V Collector cut-off current ICBO VCB= 600 V , IE=0 100 μ A Collector cut-off current ICEO VCE= 400 V , IB=0 200 μ A Emitter cut-off current IEBO VEB= 7 V , IC=0 100 μ A hFE（ 1） VCE= 20 V, IC= 20mA 10 40 DC current gain hFE（ 2） VCE= 10V, IC= 0.25 mA 5 Collector-emitter saturation voltage VCE(sat) IC= 50mA, IB= 10 mA 0.5 V Base-emitter saturation voltage VBE(sat) IC= 50 mA, IB= 10mA 1.2 V Transition frequency f T VCE= 20 V, IC=20mA f = 1MHz 8 MHz Fall time t f 0.3 μ s Storage time t S IC=50mA, IB1=-IB2=5mA, VCC=45V 1.5 μ s CLASSIFICATION OF hFE(1) Rank Range 10-15 15-20 20-25 25-30 30-35 35-40