广州从谊计算机有限公司
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2023年08月30日 17:27
内存类型 |
DDR |
适用类型 |
台式机 |
内存频率 |
DDR3 1333 |
颗粒封装 |
FBGA |
内存容量 |
4GB |
品牌/型号 |
金士顿/KHX1333C9D3UK2/4GX |
KHX1333C9D3UK2/4GX 4GB (2GB 256M x 64-Bit x 2 pcs.) DDR3-1333 CL9 240-Pin DIMM Kit DESCRIPTION: Kingston's KHX1333C9D3UK2/4GX is a kit of two 256M x 64-bit 2GB (2048MB) DDR3-1333 CL9 SDRAM (Synchronous DRAM) ultra low voltage memory modules, based on sixteen 128M x 8-bit DDR3 FBGA components ? per module. Total kit capacity is 4GB. Each module kit supports Intel XMP (Extreme Memory Profiles). Each module kit has been tested to run at DDR3-1333 CL9-9-9 at 1.25V (Profile #1). The SPDs are programmed to JEDEC standard latency DDR3-1333Mhz timing of 9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingers and requires 1.5V. The JEDEC standard electrical and mechanical specifications are as follows: FEATURES: JEDEC standard 1.5V !à 0.075V Power Suppl VDDQ = 1.5V !à 0.075 667MHz fCK for 1333Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 6,7,8,9 Posted CAS Programmable Additive Latency: 0, CL - 2, or CL - 1 clock Programmable CAS Write Latency(CWL) = 7(DDR3-1333) 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address !°000!± only), 4 with tCCD = 4 which does n allow seamless read or write [either on the fly using A12 or MRS] Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm !à 1% On Die Termination using ODT pin Average Refresh Period 7.8us at lower then TCASE 85!aC, 3.9us at 85!aC < TCASE . 95 Asynchronous Reset PCB : Height 1.180!± (30.00mm), double sided componen PERFORMANCE: CL(IDD)9 cycles Row Cycle Time (tRCmin)49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin)110ns Row Active Time (tRASmin)36ns (min.) Power (operating per module)2.160 W (DDR3-1333 @ standard 1.5V) UL Rating94 V - 0 o o Operating Temperature0 C to 85 C o o Storage Temperature-55 C to 100 C Document No. 4805500-001.B00 Page 1 04/05/10
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