金士顿台式机内存条/DDR3/1333/4G正品行货批发/全国终身联保

KVR1333D3S9/4G 4GB 512M x 64-Bit PC3-10600 CL9 204-Pin SODIMM DESCRIPTION: This document describes ValueRAM's 512M x 64-bit (4GB) DDR3-1333MHz CL9 SDRAM (Synchronous DRAM) memory module, based on sixteen 256M x 8-bit DDR3-1333MHz FBGA components. The SPD is programmed to JEDEC standard latency 1333MHz timing of 9-9-9 at 1.5V. This 204-pin SODIMM uses gold contact fingers and requires +1.5V. The electrical and mechanical specifications are as follows: FEATURES: JEDEC standard 1.5V !à 0.075V Power Suppl VDDQ = 1.5V !à 0.075 667MHz fCK for 1333Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 5,6,7,8,9,10 Posted CAS Programmable Additive Latency: 0, CL - 2, or CL - 1 clock Programmable CAS Write Latency(CWL) = 7(DDR3-1333) 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address !°000!± only), 4 with tCCD = which does not allow seamless read or write [either on the fly using A12 or MRS] Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm !à 1% On Die Termination using ODT pin Average Refresh Period 7.8us at lower then TCASE 85!aC, 3.9us at 85!aC < TCASE . 95 Asynchronous Reset PCB : Height 1.180!± (30.00mm), double sided componen PERFORMANCE: CL(IDD)9 cycles Row Cycle Time (tRCmin)49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 160ns Row Active Time (tRASmin)36ns (min.) Power1.140 W (operating) UL Rating94 V - 0 o o Operating Temperature0 C to 85 C o o Storage Temperature-55 C to +100 C Document No. VALUERAM0908-001.A00 Page 1 04/06/10